Turning front-line experience into deliverables. All services are based on open-domain knowledge and methodology — no confidential information from any former employer is involved. Compliant, after-hours, personal-brand oriented.
1-on-1 services use scarcity-based pricing; recorded courses use a low-margin, high-volume model. Ranges are for reference — specifics are negotiable.
1-on-1 résumé rewrite + feedback report, tailored to process / device / PIE / YE roles.
Technical interview role-play based on a real JD + a debrief report.
Part-time advisory for equipment vendors, material suppliers and startups.
Hands-on semiconductor thin-film process course for new grads and career-switchers.
Front-line process expertise compiled into downloadable paid references — instant delivery after payment.
Note: digital products are virtual goods — delivered instantly after payment and kept permanently. No refund after sale; please confirm your needs before ordering.
Job-Hunting Map + Interview Bank + four frontline process reports (SiN / low-k / CMOS / Diamond). Buy separately = ¥375; the bundle is ¥299 — save ¥76 and get the whole shelf at once.
Each pack includes a 1-page free sample — try before you buy.
🆕 New: "CVD Process Interview 50 Q&A" (¥29.9) and "APF Amorphous-Carbon Hard Mask Technical Report · Optimized & Expanded" (¥59) are now sold separately — see the Job Prep and Process Deep-Dive sections below.
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From ¥9.9. Try the free sample of each pack before you decide.
Written by an 11-year front-line engineer for anyone wanting into semiconductors. Clarifies what insiders know but outsiders can't find: how domestic fabs are distributed, what core roles (CVD / device / PIE / YE / TD) really do, interview hot topics, salary ranges, and how to choose / prepare / avoid pitfalls. A map to read before sending résumés.

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High-frequency interview questions compiled by an 11-year engineer, covering the largest common denominator of technical interviews: process basics, CVD thin-film, CMOS device, PIE integration, yield (YE), reliability failure, EHS safety, behavioral. Each with answer + analysis — self-test and prep in one.

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11 years of front-line experience answering your specific questions. 6-question quota across two tracks: ① semiconductor tech (CVD thin-film / CMOS device / reliability / process integration); ② career planning (resume direction / job-hopping rhythm / technical path / PIE-YE transition). Each with illustrated breakdown, archive-friendly.

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Quota: 6 questions, split or batch, use within 3 months
Delivery: WeChat text + images, viewable anytime
Real CVD / thin-film know-how from 11 years on the production line.
A vertical interview question bank for CVD / thin-film process roles, compiled by an 11-year front-line CVD / PIE engineer. Not generic name-dropping — the 50 questions are split by real fab modules: fundamentals, equipment & process types (APCVD / LPCVD / PECVD / HDP / FCVD / ALD), dielectric films, metal CVD, defects & yield, and interview practice. Each question clarifies where the film lives (FEOL / BEOL), what it does, and where the pitfalls are — so you can speak with substance, not just keywords.

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Systematic strain engineering for NMOS mobility: PECVD stress tuning, UV cure physics, dual-stress-layer / SMT integration, hot-carrier reliability trade-offs — plus a 28nm process-window quick-reference table. Based on open literature & production experience. ~13-page PDF.

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Systematic low-k/ULK dielectric thin films: interconnect RC-delay bottleneck, Clausius-Mossotti k-reduction physics, FSG/CDO/porous-ULK families, precursor chemistry quick-reference, UV-cure strengthening, PID plasma damage & mitigation, and the core k ↔ strength ↔ reliability triangle. Based on open principles. 22 pages.

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For device-reliability, process-integration and PIE/YE engineers: systematic CMOS device failure effects and advanced process modules. Reliability: HCI, NBTI/PBTI, TDDB degradation mechanisms. Process: STI, well engineering, salicide, SMT, dual-stress liner, contact/metal and low-k interconnect principles & integration logic. Based on open principles. 39 pages.

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Diamond — the "ultimate semiconductor": 5.47 eV bandgap, ~2200 W/mK room-temperature thermal conductivity (5× copper, 13× silicon), breakdown field and carrier mobility beating Si / GaN / SiC. As AI compute hits the "thermal wall" and high-power devices & quantum tech (NV centers) heat up, semiconductor-grade diamond is moving from lab to industry. This report covers MPCVD equipment & plasma principles, nucleation & homoepitaxy, doping (B p-type feasible, n-type still a world challenge) & defect control, quality characterization, and ties together AI-chip cooling, power devices and quantum sensing.

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A systematic breakdown of the PECVD hydrogenated amorphous-carbon (APF) hard mask: why front-end needs a carbon-based hard mask, the plasma deposition of hydrogenated amorphous carbon and the O₂-ashing self-aligned mechanism, how it replaces metal hard masks at the highest aspect-ratio FEOL features (AA / STI, Poly gate, CT contact), and why BEOL switches to a TiN metal hard mask (MHM) because porous low-k cannot survive O₂ ashing. Based on open principles and production experience — a front-line report that makes "hard-mask selection" crystal clear.
🆕 Expanded edition: 17 chapters, 8 figures — adds AA / Poly / CT production-loop practice, etch-selectivity micro-mechanics, defects & yield, DOE/SPC, and domestic carbon hard-mask supply-chain trends.

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A systematic breakdown of SACVD O₃/TEOS HARP high-aspect-ratio gap-fill: ozone-TEOS thermal reaction mechanism, substrate selectivity (Si / SiN / SiO₂ rate differences), three-step recipe design, real 28nm seam & under-cut cases, Pad-SiN pull-back sweet spot, the hidden H₂ pre-treatment switch on fill initiation rate, and the HARP vs HDP-CVD vs FCVD selection logic. Based on open principles and front-line experience — a front-line report that makes "how to fill high aspect ratios uniformly and fully" crystal clear.
🆕 8 chapters, 16 figures — adds HARP three-step process window, full 28nm integration chain, seam root-cause checklist and the four-account joint-tuning methodology.

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A technical report on nitrogen-doped silicon carbide (NDC / SiCN) dielectric films: permittivity vs. stress vs. step-coverage trade-offs, Cu diffusion barrier applications, and deposition-window guidance for advanced interconnects. Based on open literature & production experience. PDF e-book.

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